TC1404N rev2_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1/3 0.5w high linearity and high efficiency gaas power fets features 0.5w typical power at 12 ghz photo enlargement linear power gain: g l = 11 db typical at 12 ghz high linearity: ip3 = 37 dbm typical at 12 ghz high power added efficiency: nominal pae of 40 % at 12 ghz non-via hole source for single-bias application suitable for high reliability application breakdown voltage: bv dgo 13.5 v lg = 0.25 m, wg = 1.2 mm tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1404N is a gaas pseudomorphic high electron mobility transistor (phemt) which has high linearity and high power added efficiency. the device is processed without via-holes for single-bias applications. the short gate length enables the device to be used in circuits up to 20ghz. all devices are 100% dc tested to assure consistent quality. bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. backside gold plating is compatible with standard ausn die-attach. typical applications include commercial and military high performance power amplifiers electrical specifications (t a =25 c) symbol conditions min typ max unit p 1db output power at 1db gain compression point , f = 12ghz v ds = 8 v, i ds = 120 ma 26.5 27 dbm g l linear power gain, f = 12ghz v ds = 8 v, i ds = 120 ma 11 db ip3 intercept point of the 3 rd -order intermodulation, f = 12ghz v ds =8v, i ds = 120 ma, * p scl = 14 dbm 37 dbm pae power added efficiency at 1db compression power, f = 12ghz 40 % i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 360 ma g m transconductance at v ds = 2 v, v gs = 0 v 260 ms v p pinch-off voltage at v ds = 2 v, i d = 2.4 ma -1.7 volts bv dgo drain-gate breakdown voltage at i dgo =0.6 ma 13.5 15 volts r th thermal resistance 30 c/w note: * p scl : output power of single carrier level.
TC1404N rev2_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2/3 absolute maximum ratings (t a =25 c) symbol parameter rating v ds drain-source voltage 12 v v gs gate-source voltage -5 v i ds drain current i dss p in rf input power, cw 26 dbm p t continuous dissipation 1.9 w t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c chip dimensions chip thickness : 76.2 units : micrometer drain pad : 55*55 gate pad : 45*45
TC1404N rev2_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 3/3 cgs cgd cds rg rd rdb ris rs id lg ld ls cbs rid small signal model, v ds = 8 v, i ds = 120 ma schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.02 nh rs 0.8 ohm rg 0.97 ohm ls 0.005 nh cgs 2.652 pf cds 0.274 pf ri 1.246 ohm rds 55.8 ohm cgd 0.144 pf rd 0.65 ohm gm 574.6 ms ld 0.02 nh t 3.9 psec large signal model, v ds = 8 v, i ds = 120 ma schemati tom2 model parameters vto -1.62 v vmax 0.5 v alpha 14.13 cgd 0.144 pf beta 0.354 cgs 2.652 pf gamma 0.0228 cds 0.274 pf delta 0.1565 ris 2.005 ohm q 0.88 rid 0.0001 ohm ng 0.1 vbr 13.5 v nd 0.01 rdb 119.667 ohm tau 3.9 ps cbs 2.5 pf rg 0.97 ohm tnom 25 c rd 0.65 ohm ls 0.005 nh rs 0.8 ohm lg 0.02 nh is 1e-11 ma ld 0.02 nh n 1 afac 1 vbi 1 v nfing 1 vdelta 0.2 v chip handling die attachment: conductive epoxy or eutectic die attach is recommended. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at stage temperature: 290 c 5 c; handling tool: tweezers; time: less than 1min. wire bonding: the recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. stage temperature: 220 c to 250 c; bond tip temperature: 150 c; bond force: 20 to 30 gms depending on size of wire and bond tip temperature. handling precautions: the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v.
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